APT53N60BC6
MOSFET N-CH 600V 53A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT53N60BC6 is a 600V N-Channel CoolMOS™ Power MOSFET. This through-hole device, housed in a TO-247-3 package, offers a continuous drain current of 53A at 25°C (continuous drain current up to 53A (Tc)) and a maximum power dissipation of 417W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 70mOhm at 25.8A and 10V gate drive, and a gate charge (Qg) of 154 nC at 10V. Input capacitance (Ciss) is specified at 4020 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 25.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.72mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020 pF @ 25 V |
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