APT53F80J
MOSFET N-CH 800V 57A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology’s APT53F80J is an N-Channel POWER MOS 8™ MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 57 A at 25°C, with a maximum power dissipation of 960 W. The APT53F80J offers a low on-resistance of 110 mOhm at 43 A and 10 V, and a gate charge of 570 nC at 10 V. It is housed in a SOT-227-4, miniBLOC package with ISOTOP® construction, facilitating chassis mounting for efficient thermal management. Key parameters include a Gate-Source Voltage (Vgs) range of ±30 V and a threshold voltage (Vgs(th)) of 5 V at 5 mA. This device is suitable for industrial power supplies, motor control, and high-voltage switching applications.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17550 pF @ 25 V |
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