APT51F50J
MOSFET N-CH 500V 51A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT51F50J is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 500 V drain-to-source voltage rating and a continuous drain current capability of 51 A at 25°C, with a maximum power dissipation of 480 W. The device exhibits a low on-resistance of 75 mOhm at 37 A and 10 V gate-to-source voltage. Key parameters include a gate charge of 290 nC and input capacitance of 11600 pF. The APT51F50J utilizes ISOTOP® packaging for enhanced thermal management and is suitable for chassis mounting. This MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11600 pF @ 25 V |
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