APT50N60JCCU2
MOSFET N-CH 600V 50A SOT227Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT50N60JCCU2 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a continuous drain current capability of 50A at 25°C and a maximum power dissipation of 290W, making it suitable for demanding applications. The low on-resistance of 45mOhm at 22.5A and 10V gate drive voltage, coupled with optimized gate charge (Qg) of 150 nC, ensures efficient switching performance. The device utilizes a robust SOT-227 (miniBLOC) chassis mount package, facilitating effective thermal management. Key parameters include a drain-source breakdown voltage of 600V, input capacitance (Ciss) of 6800 pF at 25V, and a gate-source threshold voltage (Vgs(th)) of 3.9V at 3mA. This MOSFET is utilized in power supplies, motor controls, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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