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APT50MC120JCU2

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APT50MC120JCU2

MOSFET N-CH 1200V 71A SOT227

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microchip Technology APT50MC120JCU2 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200V and a continuous Drain current (Id) of 71A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it is suitable for demanding thermal environments, utilizing a chassis mount SOT-227-4, miniBLOC package. The device exhibits a low on-resistance of 34mOhm at 50A and 20V (Vgs), with a gate charge of 179 nC at 20V (Vgs). Input capacitance (Ciss) is specified at 2980 pF at 1000V (Vds). Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET technology is employed in power factor correction, industrial motor drives, and electric vehicle charging infrastructure.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C71A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2.3V @ 1mA (Typ)
Supplier Device PackageSOT-227
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs179 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2980 pF @ 1000 V

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