APT50M75B2FLLG
MOSFET N-CH 500V 57A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT50M75B2FLLG is an N-Channel POWER MOS 7® series MOSFET designed for high-performance power applications. This through-hole component features a 500V drain-source voltage (Vdss) and a continuous drain current capability of 57A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 75mOhm at 28.5A and 10V, with a typical gate charge of 125 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 5590 pF at 25V. The MOSFET is housed in a TO-247-3 Variant package, identified by the T-MAX™ [B2] supplier device package. This component is commonly utilized in industrial motor drives, power supplies, and electric vehicle charging systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 28.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5590 pF @ 25 V |
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