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APT50M65LFLLG

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APT50M65LFLLG

MOSFET N-CH 500V 67A TO264

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology's APT50M65LFLLG is an N-Channel POWER MOS 7® MOSFET housed in a TO-264 [L] package. This robust device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 67 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 65 mOhm at 33.5 A and 10 V Vgs, and a power dissipation capability of 694 W (Tc), it is engineered for demanding applications. Key electrical characteristics include a gate charge (Qg) of 141 nC at 10 V and input capacitance (Ciss) of 7010 pF at 25 V. The component operates across a temperature range of -55°C to 150°C (TJ). This through-hole mounted MOSFET is suitable for use in power conversion systems, industrial automation, and renewable energy applications.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 33.5A, 10V
FET Feature-
Power Dissipation (Max)694W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageTO-264 [L]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7010 pF @ 25 V

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