APT50M65JFLL
MOSFET N-CH 500V 58A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology presents the APT50M65JFLL, an N-Channel Power MOSFET from the POWER MOS 7® series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 58A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). The Rds On is specified at 65mOhm maximum at 29A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 141 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 7010 pF maximum at 25V Vds. Designed for chassis mounting, this device utilizes the ISOTOP® package and operates within a temperature range of -55°C to 150°C (TJ). This high-performance MOSFET is suitable for applications in power conversion, motor control, and industrial power supplies.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7010 pF @ 25 V |
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