APT50M65B2FLLG
MOSFET N-CH 500V 67A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT50M65B2FLLG, a POWER MOS 7® N-Channel MOSFET, offers a 500V drain-source voltage and 67A continuous drain current at 25°C. This through-hole component features a low on-resistance of 65mOhm at 33.5A and 10V Vgs. The device boasts a maximum power dissipation of 694W (Tc) and a gate charge of 141nC at 10V. Input capacitance (Ciss) is rated at 7010pF at 25V. The T-MAX™ [B2] package, specifically the TO-247-3 variant, is suitable for high-power applications. This MOSFET is utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 33.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 694W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7010 pF @ 25 V |
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