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APT5020BN

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APT5020BN

MOSFET N-CH 500V 28A TO247AD

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology POWER MOS IV® APT5020BN is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 28A at 25°C. The APT5020BN offers a maximum on-resistance (Rds On) of 200mOhm at 14A and 10V gate drive, with a typical gate charge (Qg) of 210 nC at 10V. It boasts a maximum power dissipation of 360W (Tc) and operates within an extended temperature range of -55°C to 150°C (TJ). The device is housed in a TO-247AD package, suitable for through-hole mounting. This MOSFET finds application in power conversion, motor control, and power supply designs across industrial and automotive sectors.

Additional Information

Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-247AD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V

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