APT5020BN
MOSFET N-CH 500V 28A TO247ADManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS IV® APT5020BN is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 28A at 25°C. The APT5020BN offers a maximum on-resistance (Rds On) of 200mOhm at 14A and 10V gate drive, with a typical gate charge (Qg) of 210 nC at 10V. It boasts a maximum power dissipation of 360W (Tc) and operates within an extended temperature range of -55°C to 150°C (TJ). The device is housed in a TO-247AD package, suitable for through-hole mounting. This MOSFET finds application in power conversion, motor control, and power supply designs across industrial and automotive sectors.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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