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APT5018BLLG

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APT5018BLLG

MOSFET N-CH 500V 27A TO247

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microchip Technology APT5018BLLG is an N-Channel POWER MOS 7® series MOSFET designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 27 A at 25°C. With a maximum power dissipation of 300 W (Tc), it is suitable for demanding power conversion and switching tasks. The APT5018BLLG exhibits a low on-resistance (Rds On) of 180 mOhm at 13.5 A and 10 V, ensuring efficient operation. Key parameters include a gate charge (Qg) of 58 nC at 10 V and input capacitance (Ciss) of 2596 pF at 25 V, facilitating robust switching performance. This through-hole component is housed in a TO-247-3 package, making it ideal for applications in power supply units, industrial motor control, and electric vehicle power management. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 13.5A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-247 [B]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2596 pF @ 25 V

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