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APT5016BFLLG

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APT5016BFLLG

MOSFET N-CH 500V 30A TO247

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology POWER MOS 7® APT5016BFLLG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 30 A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 329 W (Tc), it is suitable for demanding power conversion tasks. The APT5016BFLLG exhibits a low on-resistance (Rds On) of 160 mOhm at 15 A and 10 V, facilitating efficient power delivery. Its gate charge (Qg) is 72 nC at 10 V, and input capacitance (Ciss) is 2833 pF at 25 V. Packaged in a TO-247-3 through-hole format, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). Applications include power supplies, motor control, and lighting systems within the industrial and automotive sectors.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)329W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-247 [B]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2833 pF @ 25 V

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