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APT5015SVFRG

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APT5015SVFRG

MOSFET N-CH 500V 32A D3PAK

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology POWER MOS V® APT5015SVFRG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 32A at 25°C (Tc). The Rds On is specified at a maximum of 150mOhm at 16A with a 10V gate drive. With a maximum power dissipation of 370W (Tc), it is suitable for demanding power conversion and switching tasks. The device is packaged in a TO-268-3, D3PAK (TO-268AA) for efficient heat dissipation, and it is supplied in a tube. Key parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 5280 pF at 25V. This MOSFET operates across a temperature range of -55°C to 150°C (TJ) and is utilized in industries such as telecommunications and industrial power supplies.

Additional Information

Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)370W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD3PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5280 pF @ 25 V

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