APT5010B2FLLG
MOSFET N-CH 500V 46A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT5010B2FLLG, an N-Channel POWER MOS 7® MOSFET, offers a 500V drain-source voltage (Vdss) and continuous drain current capability of 46A at 25°C (Tc). This component features a low on-resistance (Rds On) of 100mOhm maximum at 23A and 10V Vgs, with a gate charge (Qg) of 95 nC maximum at 10V. The input capacitance (Ciss) is rated at 4360 pF maximum at 25V. Designed for through-hole mounting in a TO-247-3 Variant package, the APT5010B2FLLG dissipates up to 520W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, switched-mode power supplies, and motor control.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 25 V |
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