APT4M120K
MOSFET N-CH 1200V 5A TO220Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT4M120K is a high-voltage N-Channel MOSFET designed for demanding power applications. This component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 5 A at 25°C. With a maximum power dissipation of 225 W (Tc) and a low on-resistance of 4 Ohms maximum at 2 A and 10 V, it offers efficient power handling. Key parameters include a gate charge (Qg) of 43 nC at 10 V and input capacitance (Ciss) of 1385 pF at 25 V. The device is housed in a standard TO-220-3 package with through-hole mounting and operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET technology is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220 [K] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1385 pF @ 25 V |
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