APT4F120S
MOSFET N-CH 1200V 4A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS 8™ N-Channel Power MOSFET, part number APT4F120S, offers a 1200V drain-source voltage and a continuous drain current of 4A at 25°C (Tc). This device features a low Rds On of 4.2 Ohm maximum at 2A and 10V, with a gate charge of 43 nC maximum at 10V. The input capacitance (Ciss) is 1385 pF maximum at 25V. Designed for surface mounting in a TO-268-3, D3PAK package, it supports a maximum power dissipation of 175W (Tc). This component is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1385 pF @ 25 V |
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