APT47N60SC3G
MOSFET N-CH 600V 47A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology's APT47N60SC3G is a high-performance N-Channel Power MOSFET from the CoolMOS™ series. This device features a 600V drain-source breakdown voltage and a continuous drain current capability of 47A at 25°C (Tc). With a maximum on-resistance of 70mOhm at 30A and 10V Vgs, it offers excellent conduction efficiency. The MOSFET is housed in a TO-268-3, D3PAK surface mount package, facilitating efficient thermal management with a power dissipation of 417W (Tc). Key characteristics include a gate charge of 260 nC at 10V and an input capacitance of 7015 pF at 25V. This component is suitable for demanding applications in power factor correction, switch mode power supplies, and industrial motor drives. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a ±20V gate-source voltage range.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7015 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
