APT47N60BC3G
MOSFET N-CH 600V 47A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT47N60BC3G is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 47A at 25°C (Tc) and a maximum power dissipation of 417W (Tc), making it suitable for demanding power management tasks. The device exhibits a low on-resistance (Rds On) of 70mOhm at 30A and 10V gate drive, alongside a gate charge (Qg) of 260 nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 7015 pF at 25V. Packaged in a standard TO-247-3 through-hole configuration, this MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). This component finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7015 pF @ 25 V |
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