APT47F60J
MOSFET N-CH 600V 49A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Microchip Technology APT47F60J is an N-Channel POWER MOS 8™ MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 49A at 25°C, with a maximum power dissipation of 540W (Tc). Its low Rds On of 90mOhm is achieved at 33A and 10V gate drive. The device offers a gate charge (Qg) of 330 nC at 10V and an input capacitance (Ciss) of 13190 pF at 25V.
Engineered with ISOTOP® packaging and a SOT-227-4, miniBLOC case, the APT47F60J is suitable for chassis mounting, facilitating efficient thermal management. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is utilized in demanding sectors such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13190 pF @ 25 V |
Request a Quote
Clients Also Buy
APT53F80J
MOSFET N-CH 800V 57A ISOTOP
APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP
APT24F50B
MOSFET N-CH 500V 24A TO247
