APT44F80B2
MOSFET N-CH 800V 47A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology POWER MOS 8™ APT44F80B2 is an N-Channel MOSFET designed for high-voltage switching applications. This component features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 47 A at 25°C (Tc), with a maximum power dissipation of 1135 W (Tc). The APT44F80B2 offers a low on-resistance (Rds On) of 210 mOhm at 24 A and 10 V, and a gate charge (Qg) of 305 nC at 10 V. Input capacitance (Ciss) is a maximum of 9330 pF at 25 V. The MOSFET is housed in a T-MAX™ [B2] package for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This device is suitable for use in power supplies, motor control, and industrial applications.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9330 pF @ 25 V |
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