APT43M60L
MOSFET N-CH 600V 45A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT43M60L is an N-Channel POWER MOS 8™ MOSFET designed for high-voltage applications requiring robust performance. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 45A at 25°C (Tc), with a maximum power dissipation of 780W (Tc). The APT43M60L exhibits a low on-resistance (Rds On) of 150mOhm at 21A and 10V gate drive, facilitated by a gate charge (Qg) of 215nC at 10V. Input capacitance (Ciss) is rated at 8590pF maximum at 25V. Constructed with Metal Oxide technology, this MOSFET is housed in a TO-264-3, TO-264AA package for through-hole mounting. Key parameters include a gate-source threshold voltage (Vgs(th)) of 5V maximum at 2.5mA and a maximum gate-source voltage (Vgs) of ±30V. This device is suitable for power supply, motor control, and industrial applications.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8590 pF @ 25 V |
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