APT43M60B2
MOSFET N-CH 600V 45A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's POWER MOS 8™ APT43M60B2 is a high-performance N-Channel Power MOSFET designed for demanding power conversion applications. This through-hole component features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 45 A at 25°C (Tc), with a maximum power dissipation of 780 W (Tc). Key electrical specifications include a maximum Rds(On) of 150 mOhm at 21 A and 10 V, and a gate charge (Qg) of 215 nC at 10 V. The input capacitance (Ciss) is 8590 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a T-MAX™ [B2] package, specifically a TO-247-3 variant. This MOSFET is suitable for use in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8590 pF @ 25 V |
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