Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

APT43F60L

Banner
productimage

APT43F60L

MOSFET N-CH 600V 45A TO264

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT43F60L is a Power MOSFET from the POWER MOS 8™ series. This N-Channel device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 45A at 25°C (Tc). The APT43F60L offers a low on-resistance (Rds On) of 150mOhm at 21A and 10V gate-source voltage. It boasts a maximum power dissipation of 780W (Tc) and a gate charge (Qg) of 215 nC at 10V. The input capacitance (Ciss) is a maximum of 8590 pF at 25V. This component is housed in a TO-264 package and is suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This device is commonly utilized in high-voltage power conversion applications across industrial and renewable energy sectors.

Additional Information

Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)780W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageTO-264 [L]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8590 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APT53F80J

MOSFET N-CH 800V 57A ISOTOP

product image
APT60GA60JD60

IGBT MOD 600V 112A 356W ISOTOP

product image
APT24F50B

MOSFET N-CH 500V 24A TO247