APT42F50S
MOSFET N-CH 500V 42A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT42F50S from the POWER MOS 8™ series is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source breakdown voltage (Vds) of 500 V and a continuous drain current (Id) of 42 A at 25°C case temperature, with a maximum power dissipation of 625 W (Tc). The low on-resistance (Rds On) of 130 mOhm at 21 A and 10 V gate drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 170 nC at 10 V and input capacitance (Ciss) of 6810 pF at 25 V. Packaged in a TO-268-3, D3PAK (TO-268AA) for surface mounting, this MOSFET is suitable for demanding applications in power supplies, industrial motor control, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6810 pF @ 25 V |
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