APT42F50B
MOSFET N-CH 500V 42A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT42F50B is an N-Channel Power MOSFET from the POWER MOS 8™ series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 42 A at 25°C. The device boasts a low on-resistance (Rds On) of 130 mOhm at 21 A and 10 V gate drive, facilitating reduced conduction losses. With a maximum power dissipation of 625 W (Tc), it is suitable for demanding thermal environments. Key parameters include a Gate Charge (Qg) of 170 nC at 10 V and an Input Capacitance (Ciss) of 6810 pF at 25 V. The APT42F50B is housed in a TO-247-3 through-hole package, commonly utilized in power supply units, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±30V.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6810 pF @ 25 V |
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