APT40N60JCU3
MOSFET N-CH 600V 40A SOT227Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT40N60JCU3 is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 40A at 25°C (Tc), with a maximum power dissipation of 290W (Tc). The APT40N60JCU3 offers a low On-Resistance (Rds On) of 70mOhm at 20A and 10V Vgs, and a Gate Charge (Qg) of 259 nC at 10V. Input capacitance (Ciss) is a maximum of 7015 pF at 25V. The MOSFET is housed in a SOT-227-4, miniBLOC package for chassis mounting. This component is suitable for use in power conversion, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum Gate-to-Source Voltage (Vgs) of ±20V and a Gate Threshold Voltage (Vgs(th)) of 3.9V at 1mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 259 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7015 pF @ 25 V |
Request a Quote
Clients Also Buy
MSC080SMA120SDT/R
MOSFET SIC 1200 V 80 MOHM TO-263
MCP87130T-U/LC
MOSFET N-CH 25V 43A 8PDFN
LND150N3-G
MOSFET N-CH 500V 30MA TO92-3
