APT39F60J
MOSFET N-CH 600V 42A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT39F60J is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 42A at 25°C, with a maximum power dissipation of 480W (Tc). The Rds On is specified at a maximum of 110mOhm at 28A and 10V. Key parameters include a maximum gate charge (Qg) of 280 nC at 10V and an input capacitance (Ciss) of 11300 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a SOT-227-4, miniBLOC package, commonly known as ISOTOP®, designed for chassis mounting. This MOSFET is suitable for applications in power supply units, industrial motor control, and high-voltage switching circuits.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
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