APT38F80L
MOSFET N-CH 800V 41A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT38F80L is an N-Channel POWER MOS 8™ MOSFET designed for high-voltage power switching applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 41A at 25°C (Tc), with a maximum power dissipation of 1040W (Tc). The Rds On is specified at 240mOhm maximum at 20A and 10V gate drive. Key parameters include an input capacitance (Ciss) of 8070 pF at 25 V and a gate charge (Qg) of 260 nC at 10 V. The device is housed in a TO-264 [L] package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industries such as power supplies, industrial motor control, and uninterruptible power supplies (UPS).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8070 pF @ 25 V |
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