APT38F80B2
MOSFET N-CH 800V 41A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT38F80B2 is an N-Channel POWER MOS 8™ MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 41A at 25°C (Tc). The APT38F80B2 features a low on-resistance (Rds On) of 240mOhm maximum at 20A and 10V Vgs. With a maximum power dissipation of 1040W (Tc) and a maximum gate charge (Qg) of 260 nC at 10V, this device is suitable for demanding power conversion and switching applications. The input capacitance (Ciss) is 8070 pF maximum at 25V Vds. The APT38F80B2 is packaged in a T-MAX™ [B2] (TO-247-3 Variant) through-hole package, allowing for efficient heat dissipation and robust mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industries such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8070 pF @ 25 V |
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