APT38F50J
MOSFET N-CH 500V 38A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT38F50J is an N-Channel POWER MOS 8™ MOSFET designed for high-power switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 38A at 25°C (Tc). With a maximum power dissipation of 355W (Tc), it is suitable for demanding thermal environments. The ISOTOP® package with chassis mount facilitates efficient heat transfer. Key electrical parameters include a low on-resistance (Rds On) of 100mOhm maximum at 28A and 10V, and a gate charge (Qg) of 220 nC maximum at 10V. Input capacitance (Ciss) is 8800 pF maximum at 25V. This device operates across a temperature range of -55°C to 150°C (TJ). It finds application in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 355W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V |
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