APT37F50S
MOSFET N-CH 500V 37A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT37F50S is an N-Channel POWER MOS 8™ Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 37A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). The device exhibits a low on-resistance (Rds On) of 150mOhm at 18A and 10V gate drive. Key parameters include a gate charge (Qg) of 145 nC at 10V and an input capacitance (Ciss) of 5710 pF at 25V. The APT37F50S is available in a TO-268-3, D3PAK (TO-268AA) surface mount package, suitable for demanding industrial and power supply applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5710 pF @ 25 V |