APT37F50B
MOSFET N-CH 500V 37A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT37F50B is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 37 A at 25°C (Tc). With a maximum power dissipation of 520 W (Tc) and a low on-resistance (Rds On) of 150 mOhm at 18 A and 10 V, it is suitable for demanding power conversion and control systems. Key electrical characteristics include a gate charge (Qg) of 145 nC at 10 V and input capacitance (Ciss) of 5710 pF at 25 V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and is packaged in a TO-247-3 through-hole configuration. This device finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5710 pF @ 25 V |
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