APT34N80LC3G
MOSFET N-CH 800V 34A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT34N80LC3G is an N-Channel Power MOSFET designed for high-voltage, high-power applications. This component features a 800V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 34A at 25°C (Tc), with a maximum power dissipation of 417W (Tc). The on-resistance (Rds On) is specified at 145mOhm maximum at 22A and 10V gate-source voltage. It utilizes Metal Oxide technology and is housed in a TO-264-3, TO-264AA package with a through-hole mounting type. Key parameters include a gate charge (Qg) of 355 nC maximum at 10V and input capacitance (Ciss) of 4510 pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for applications in power supply units, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 355 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 25 V |
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