APT34N80B2C3G
MOSFET N-CH 800V 34A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT34N80B2C3G is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 34A at 25°C, with a maximum power dissipation of 417W. The Rds(on) is specified at 145mOhm maximum at 22A and 10V gate drive. Key electrical characteristics include an input capacitance (Ciss) of 4510 pF maximum at 25V and a gate charge (Qg) of 355 nC maximum at 10V.
This through-hole device is housed in a TO-247-3 Variant package, specifically the T-MAX™ [B2] configuration. It operates within a temperature range of -55°C to 150°C. The APT34N80B2C3G is suitable for power switching applications across various industries, including industrial power supplies, electric vehicle charging, and renewable energy systems. It supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 3.9V maximum. This component is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 2mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 355 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 25 V |
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