APT34F60S
MOSFET N-CH 600V 36A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS 8™ APT34F60S is a 600 V N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 190 mOhm at 17A and 10V gate drive, contributing to reduced conduction losses. With a continuous drain current capability of 36A (Tc) and a maximum power dissipation of 624W (Tc), it is suitable for demanding power management tasks. The APT34F60S utilizes a TO-268-3, D3PAK surface mount package for efficient thermal management. Key parameters include a gate charge of 165 nC @ 10 V and input capacitance of 6640 pF @ 25 V. This component is commonly employed in power supplies, motor control, and industrial automation systems. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 624W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF @ 25 V |
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