APT34F60B
MOSFET N-CH 600V 36A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT34F60B is a 600V N-Channel Power MOSFET designed for high-performance applications. This component features a continuous drain current capability of 36A (Tc) and a maximum power dissipation of 624W (Tc). The APT34F60B offers a low on-resistance of 210mOhm at 17A and 10V gate drive voltage, with a specified Rds(on) test condition. Key parameters include a gate charge of 165 nC at 10V and input capacitance (Ciss) of 6640 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-247-3 through-hole configuration, this MOSFET is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 624W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF @ 25 V |
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