APT34F100L
MOSFET N-CH 1000V 35A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT34F100L is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 35 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 400 mOhm at 18 A and 10 V gate-source voltage. With a maximum power dissipation of 1135 W at 25°C (Tc), it is suitable for demanding power conversion and control tasks. Key parameters include a gate charge (Qg) of 305 nC at 10 V and input capacitance (Ciss) of 9835 pF at 25 V. The MOSFET is housed in a TO-264-3, TO-264AA package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in power supplies, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9835 pF @ 25 V |
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