APT34F100B2
MOSFET N-CH 1000V 35A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT34F100B2 is an N-Channel POWER MOS 8™ series MOSFET designed for high-voltage applications. This component features a 1000 V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 1135W (Tc). The APT34F100B2 offers a low on-resistance (Rds On) of 380mOhm maximum at 18A and 10V gate-source voltage (Vgs). Key parameters include a 305 nC maximum gate charge (Qg) at 10V and 9835 pF maximum input capacitance (Ciss) at 25V. The device operates over a temperature range of -55°C to 150°C (TJ) and is housed in a through-hole TO-247-3 variant package, specifically the T-MAX™ [B2] supplier device package. This MOSFET is suitable for demanding power conversion and switching applications across various industrial sectors.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9835 pF @ 25 V |
Request a Quote
Clients Also Buy
APT53F80J
MOSFET N-CH 800V 57A ISOTOP
APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP
APT24F50B
MOSFET N-CH 500V 24A TO247
