APT32F120J
MOSFET N-CH 1200V 33A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT32F120J is a high-performance N-Channel Power MOSFET from the POWER MOS 8™ series. This component features a 1200V drain-source breakdown voltage and a continuous drain current of 33A at 25°C, with a maximum power dissipation of 960W. Designed for robust operation, it offers a low on-resistance of 320mOhm at 25A and 10V Vgs. The ISOTOP® package provides efficient thermal management for chassis mounting. Key electrical characteristics include a gate charge of 560nC at 10V and input capacitance (Ciss) of 18200pF at 25V. Operating within a temperature range of -55°C to 150°C, the APT32F120J is suitable for applications in industrial motor control, power supplies, and electric vehicle power conversion.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 560 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18200 pF @ 25 V |
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