APT30M60J
MOSFET N-CH 600V 31A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS 8™ APT30M60J is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 31 A at 25°C. The maximum power dissipation is 355 W (Tc), with a typical Rds On of 150 mOhm at 21 A and 10 V. The device is housed in an ISOTOP® package (SOT-227-4, miniBLOC) for chassis mounting. Key parameters include a gate charge (Qg) of 215 nC at 10 V and an input capacitance (Ciss) of 5890 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 355W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V |
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