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APT30M40JVFR

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APT30M40JVFR

MOSFET N-CH 300V 70A ISOTOP

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT30M40JVFR is an N-Channel POWER MOS V® MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 300 V and a continuous drain current (Id) of 70A at 25°C (Tc), with a maximum power dissipation of 450W (Tc). The APT30M40JVFR offers a low on-resistance (Rds On) of 40mOhm at 500mA and 10V Vgs, and features a gate charge (Qg) of 425 nC at 10V. With an input capacitance (Ciss) of 10200 pF at 25V and a gate-source voltage (Vgs) tolerance of ±30V, it is suitable for demanding switching applications. The device operates within an extended temperature range of -55°C to 150°C (TJ). Packaged in the ISOTOP® SOT-227-4, miniBLOC format for chassis mounting, this MOSFET is utilized in industries such as industrial motor control and power supply units where robust performance and thermal management are critical.

Additional Information

Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)450W (Tc)
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10200 pF @ 25 V

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