APT30M36B2FLLG
MOSFET N-CH 300V 84A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT30M36B2FLLG is an N-Channel POWER MOS 7® series MOSFET designed for high-power applications. This through-hole component offers a drain-source voltage (Vdss) of 300 V and a continuous drain current capability of 84 A at 25°C (Tc). The device features a low on-resistance (Rds On) of 36 mOhm at an Id of 42 A and Vgs of 10 V. With a gate charge (Qg) of 115 nC at 10 V and input capacitance (Ciss) of 6480 pF at 25 V, it is suitable for demanding switching applications. The TO-247-3 Variant package, designated as T-MAX™ [B2] by the manufacturer, ensures robust thermal performance. This MOSFET finds utility in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 42A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6480 pF @ 25 V |
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