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APT30M36B2FLLG

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APT30M36B2FLLG

MOSFET N-CH 300V 84A T-MAX

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT30M36B2FLLG is an N-Channel POWER MOS 7® series MOSFET designed for high-power applications. This through-hole component offers a drain-source voltage (Vdss) of 300 V and a continuous drain current capability of 84 A at 25°C (Tc). The device features a low on-resistance (Rds On) of 36 mOhm at an Id of 42 A and Vgs of 10 V. With a gate charge (Qg) of 115 nC at 10 V and input capacitance (Ciss) of 6480 pF at 25 V, it is suitable for demanding switching applications. The TO-247-3 Variant package, designated as T-MAX™ [B2] by the manufacturer, ensures robust thermal performance. This MOSFET finds utility in industries such as industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 42A, 10V
FET Feature-
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageT-MAX™ [B2]
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6480 pF @ 25 V

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