APT30F60J
MOSFET N-CH 600V 31A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Microchip Technology APT30F60J is an N-Channel POWER MOS 8™ series MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 31 A at 25°C (Tc). With a maximum power dissipation of 355 W (Tc), it is suitable for demanding thermal environments. The APT30F60J offers a low on-resistance (Rds On) of 150mOhm at 21 A and 10 V. Key parameters include a gate charge (Qg) of 215 nC at 10 V and an input capacitance (Ciss) of 8590 pF at 25 V. The device utilizes ISOTOP® packaging for efficient heat dissipation and is designed for chassis mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly found in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 355W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8590 pF @ 25 V |
Request a Quote
Clients Also Buy
APT53F80J
MOSFET N-CH 800V 57A ISOTOP
APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP
APT24F50B
MOSFET N-CH 500V 24A TO247
