APT30F50S
MOSFET N-CH 500V 30A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT30F50S is an N-Channel POWER MOS 8™ MOSFET designed for high-power applications. This surface mount component, housed in a D3PAK (TO-268-3) package, offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C (Tc). With a maximum power dissipation of 415W (Tc), it is suitable for demanding power conversion and switching tasks. Key electrical specifications include a low on-resistance (Rds On) of 190mOhm at 14A and 10V, a gate charge (Qg) of 115 nC @ 10V, and an input capacitance (Ciss) of 4525 pF @ 25V. The operating temperature range is -55°C to 150°C (TJ). This device finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 415W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4525 pF @ 25 V |
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