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APT30F50S

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APT30F50S

MOSFET N-CH 500V 30A D3PAK

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT30F50S is an N-Channel POWER MOS 8™ MOSFET designed for high-power applications. This surface mount component, housed in a D3PAK (TO-268-3) package, offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C (Tc). With a maximum power dissipation of 415W (Tc), it is suitable for demanding power conversion and switching tasks. Key electrical specifications include a low on-resistance (Rds On) of 190mOhm at 14A and 10V, a gate charge (Qg) of 115 nC @ 10V, and an input capacitance (Ciss) of 4525 pF @ 25V. The operating temperature range is -55°C to 150°C (TJ). This device finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.

Additional Information

Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)415W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageD3PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4525 pF @ 25 V

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