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APT30F50B

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APT30F50B

MOSFET N-CH 500V 30A TO247

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microchip Technology POWER MOS 8™ APT30F50B is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C. Its low on-resistance (Rds On) of 190mOhm at 14A and 10V gate drive minimizes conduction losses. With a maximum power dissipation of 415W at 25°C (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding environments. The APT30F50B utilizes Metal Oxide technology and is packaged in a TO-247-3 through-hole configuration. Key parameters include a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 4525 pF at 25V. This component finds application in industrial power supplies, motor control, and power factor correction circuits.

Additional Information

Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)415W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-247 [B]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4525 pF @ 25 V

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