APT30F50B
MOSFET N-CH 500V 30A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology POWER MOS 8™ APT30F50B is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C. Its low on-resistance (Rds On) of 190mOhm at 14A and 10V gate drive minimizes conduction losses. With a maximum power dissipation of 415W at 25°C (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding environments. The APT30F50B utilizes Metal Oxide technology and is packaged in a TO-247-3 through-hole configuration. Key parameters include a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 4525 pF at 25V. This component finds application in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 415W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4525 pF @ 25 V |
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