APT29F80J
MOSFET N-CH 800V 31A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT29F80J is an N-Channel POWER MOS 8™ MOSFET with a drain-source voltage (Vdss) of 800 V. This device features a continuous drain current (Id) of 31A at 25°C and a maximum power dissipation of 543W at the same temperature. The Rds On is specified at a maximum of 210mOhm at 24A and 10V gate drive. Key parameters include an input capacitance (Ciss) of 9326 pF at 25 V and a gate charge (Qg) of 303 nC at 10 V. The APT29F80J is designed for chassis mounting within the SOT-227-4, miniBLOC package, identified as ISOTOP®. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, motor control, and high-voltage switching circuits.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 303 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9326 pF @ 25 V |
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