APT29F100L
MOSFET N-CH 1000V 30A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT29F100L is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 30 A at 25°C (Tc). With a maximum power dissipation of 1040 W (Tc), it is suitable for demanding power conversion and control systems. The device exhibits a typical Rds On of 460 mOhm at 16 A and 10 V, and a gate charge (Qg) of 260 nC at 10 V. Input capacitance (Ciss) is 8500 pF at 25 V. The APT29F100L utilizes a TO-264 package, allowing for efficient heat dissipation for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
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