APT29F100B2
MOSFET N-CH 1000V 30A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT29F100B2 is an N-Channel Power MOSFET from the POWER MOS 8™ series, designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 30 A at 25°C (Tc). With a maximum power dissipation of 1040 W (Tc), it is suitable for demanding power conversion and control scenarios. The device exhibits a typical Rds On of 440 mOhm at 16 A and 10 V gate drive, with a gate charge (Qg) of 260 nC at 10 V. Input capacitance (Ciss) is specified at 8500 pF maximum at 25 V. The APT29F100B2 is housed in a through-hole TO-247-3 variant package, utilizing T-MAX™ [B2] technology for efficient thermal management. This MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
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