APT26F120L
MOSFET N-CH 1200V 27A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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This Microchip Technology APT26F120L is an N-Channel Power MOSFET designed for high-voltage applications. It features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 27A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 650mOhm maximum at 14A and 10V Vgs. With a maximum power dissipation of 1135W (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding power conversion and control systems. Key parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 9670 pF at 25V. The component is housed in a TO-264-3, TO-264AA package with a through-hole mounting type. This MOSFET is utilized in industrial and high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9670 pF @ 25 V |
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