APT26F120B2
MOSFET N-CH 1200V 27A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT26F120B2 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Vds of 1200V and a continuous drain current (Id) of 27A at 25°C (Tc), with a maximum power dissipation of 1135W (Tc). The Rds On is specified at a maximum of 650mOhm at 14A and 10V. Key parameters include a gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 9670 pF at 25V. The MOSFET is housed in a TO-247-3 Variant (T-MAX™) package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±30V. This component finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9670 pF @ 25 V |
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